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| 20 -10V 15 -4V -6V -5V -4.5V 10 Vds=-5V 8 -Id (A) 10 -3.5V 5 Vgs=-3V -Id (A) 6 4 125C 2 -2.5V 25C 0 0.00 0 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4 -Vds (Volts) Figure 1: On-Region Characteristics -Vgs (Volts) Figure 2: Transfer Characteristics 1.60E+00 100 80 Normalized On-Resistance Vgs=-4.5V 1.40E+00 Vgs=-10V Rds(on) (m:) Vgs=-4.5V 60 Vgs=-10V 40 1.20E+00 1.00E+00 Id=-5A 20 1 3 5 7 9 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 8.00E-01 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 160 140 120 Id=-5A 1E+01 1E+00 1E-01 125C Rds(on) (m:) -Is (A) 100 80 60 40 20 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C 1E-02 1E-03 1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 25C 10 Vds=-15V Id=-5A 8 1200 1000 Ciss Capacitance (pF) -Vgs (Volts) 800 600 400 Coss 200 0 Crss 0 5 10 15 20 25 30 6 4 2 0 0 2 4 6 8 10 12 14 16 -Qg (nC) Figure 7: Gate-Charge Characteristics -Vds (Volts) Figure 8: Capacitance Characteristics 100 Tj(max)=150C Ta=25C 10Ps Rds(on) limited 40 Tj(max)=150C Ta=25C 30 -Id (Amps) 1ms 0.1s 1 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms Power (W) 10 100Ps 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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